生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.64 |
雪崩能效等级(Eas): | 425 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1000 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 1.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
APT1001R6BN-GULLWING | MICROSEMI | 8A, 1000V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
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APT1001R6SFLL | ADPOW | POWER MOS 7 R FREDFET |
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APT1001R6SFLLG | MICROSEMI | Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Meta |
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APT1001R6SLL | ADPOW | Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Meta |
获取价格 |
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APT1001R6SLL | MICROSEMI | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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APT1001RAN | ADPOW | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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