APT1001R3BN-BUTT

更新时间： 2024-02-25 10:02:54

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APT1001R3BN-BUTT 数据手册

TO-247

APT1001R1BN 1000V 10.5A 1.10Ω

APT1001R3BN 1000V 10.0A 1.30Ω

POWER MOS IV^®

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

APT

Symbol Parameter

1001RBN

1001R3BN

UNIT

V_DSS

1000

10.5

1000

Volts

Drain-Source Voltage

I_D

Continuous Drain Current @ T_C= 25°C

Amps

I_DM

V_GS

Pulsed Drain Current

Gate-Source Voltage

±30

Volts

Watts

W/°C

310

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

P_D

2.48

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions / Part Number

Symbol

MIN

1000

10.5

TYP

MAX

UNIT

APT1001R1BN

APT1001R3BN

APT1001R1BN

APT1001R3BN

APT1001R1BN

APT1001R3BN

Drain-Source Breakdown Voltage

BV_DSS

Volts

(V_GS= 0V, I_D= 250 µA)

On State Drain Current

I_D(ON)

Amps

Ohms

µA

(V_DS> I_D(ON) x R_DS(ON) Max, V_GS= 10V)

1.10

1.30

250

1000

±100

Drain-Source On-State Resistance

R_DS(ON)

(V_GS= 10V, 0.5 I_D[Cont.])

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

I_GSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

V_GS(TH) Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

THERMAL CHARACTERISTICS

Volts

Symbol Characteristic

MIN

TYP

MAX

0.40

UNIT

R_θJC

R_θJA

Junction to Case

°C/W

Junction to Ambient

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

12 3 4

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