生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.14 | 特性阻抗: | 50 Ω |
构造: | MODULE | 最大输入功率 (CW): | 20 dBm |
最大工作频率: | 8000 MHz | 最小工作频率: | 2000 MHz |
最高工作温度: | 50 °C | 最低工作温度: | |
射频/微波设备类型: | WIDE BAND MEDIUM POWER | 最大电压驻波比: | 2 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT-8255R | AGILENT |
获取价格 |
2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | |
APT8256 | APLUS |
获取价格 |
Analog Circuit | |
APT-8266 | AGILENT |
获取价格 |
2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | |
APT-8266R | AGILENT |
获取价格 |
2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | |
APT83GU30B | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT83GU30B | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, | |
APT83GU30BG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, | |
APT83GU30S | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3 | |
APT83GU30S | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT83GU30SG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3 |