型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT106N60B2C6 | MICROSEMI |
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Super Junction MOSFET | |
APT10DC120HJ | MICROSEMI |
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ISOTOP SiC Diode Full Bridge Power Module | |
APT10DC60HJ | MICROSEMI |
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ISOTOP SiC Diode Full Bridge Power Module | |
APT10GT60BR | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-247AD | |
APT10GT60KR | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB | |
APT10M07 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M07JVFR | ADPOW |
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High Voltage N-Channel enhancement mode power MOSFET | |
APT10M07JVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M09B2VFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M09B2VFR_04 | ADPOW |
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POWER MOS V FREDFET |