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APM9410K PDF预览

APM9410K

更新时间: 2024-09-15 22:39:11
品牌 Logo 应用领域
茂达 - ANPEC /
页数 文件大小 规格书
9页 152K
描述
N-Channel Enhancement Mode MOSFET

APM9410K 数据手册

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APM9410  
N-Channel Enhancement Mode MOSFET  
Pin Description  
Features  
SO-8  
30V/8A , RDS(ON)=15m(typ.) @ VGS=10V  
RDS(ON)=23m(typ.) @ VGS=4.5V  
Super High Dense Cell Design for Extremely  
Low RDS(ON)  
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
Reliable and Rugged  
SO-8 Package  
Top View  
D
Applications  
Power Management in Notebook Computer ,  
Portable Equipment and Battery Powered  
Systems.  
G
S
Ordering and Marking Information  
N-Channel MOSFET  
P ackage C ode  
K : S O -8  
APM 9410  
O perating Junction Tem p. R ange  
C : -55 to 150°C  
H andling C ode  
Tem p. R ange  
P ackage C ode  
H andling C ode  
TU : Tube  
TR : Tape & R eel  
A P M 9410  
X X X X X  
A P M 9410 K :  
X X X X X - D ate C ode  
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)  
Symbol  
VDSS  
Parameter  
Rating  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGSS  
±20  
8
*
ID  
Maximum Drain Current – Continuous  
Maximum Drain Current – Pulsed  
A
IDM  
32  
* Surface Mounted on FR4 Board, t 10 sec.  
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise  
customers to obtain the latest version of relevant information to verify before placing orders.  
Copyright ANPEC Electronics Corp.  
Rev. A.5 - Feb., 2003  
1
www.anpec.com.tw  

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