Datasheet > APM4953

APM4953

更新时间： 2024-11-10 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	499K
描述
种类:P+P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-5.3A;Vgs(th)(V):±20;漏源导通电阻:41mΩ@-10V

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数据手册

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APM4953 数据手册

UMW

UMW APM4953

-30V P-Channel MOSFET

Features

VDS (V) = -30V

ID = -5.3A (VGS = 10V)

RDS(ON) ＜ 41mΩ (VGS = -10V)

RDS(ON) ＜ 75mΩ (VGS = -4.5V)

Absolute Maximum Ratings ^(T_A⁼²⁵^o^{C, unless otherwise noted)}

Symbol

V_DS

V_GS

I_D

Parameter

Ratings

-30

Units

Drain-Source Voltage

Gate-Source Voltage

±20

-5.3

-20

Drain Current (Continuous)

Drain Current (Pulsed) ^a

I_DM

P_D

Total Power Dissipation @T_A=25^oC

2.0

I_S

Maximum Diode Forward Current

-1.9

T_j, T_stg

Operating Junction and Storage Temperature Range

Thermal Resistance Junction to Ambient (PCB mounted)^b

-55 to +150

°C

°C/W

R_θ

a: Repetitive Rating: Pulse width limited by the maximum junction temperation.

b: 1-in²2oz Cu PCB board

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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