Datasheet > APM4835KC-TU

APM4835KC-TU

更新时间： 2024-11-08 22:18:23

品牌	Logo	应用领域
茂达 - ANPEC		/
页数	文件大小	规格书
9页	129K
描述
P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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APM4835KC-TU 数据手册

APM4835

P-Channel Enhancement Mode MOSFET

Features

Pin Description

•

-30V/-8A, R_DS(ON)= 16mΩ(typ.) @ V_GS= -10V

R_DS(ON)= 24mΩ(typ.) @ V_GS= -4.5V

Super High Density Cell Design

•

Reliable and Rugged

SO-8 Package

SO − 8

Applications

S S

•

Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

D D D D

Ordering and Marking Information

P-Channel MOSFET

P ackage C ode

K : S O -8

APM 4835

O peration Junction Tem p. R ange

C : -55 to 150°C

H andling C ode

Tem p. R ange

P ackage C ode

H andling C ode

TU : Tube

TR : Tape & R eel

A P M 4835

X X X X X

A P M 4835

X X X X X - D ate C ode

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Symbol

V_DSS

Parameter

Rating

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±25

-8

T = 25 C

I_D

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

I_DM

-50

*Surface Mounted on FR4 Board, t 10 sec.

≤

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Rev. A.2 - Feb., 2003

www.anpec.com.tw

12 3 4 5 6 7...9

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