Datasheet > APM4800KC-TU

APM4800KC-TU

更新时间： 2024-09-15 22:07:43

品牌	Logo	应用领域
茂达 - ANPEC		/
页数	文件大小	规格书
9页	151K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

获取价格

数据手册

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APM4800KC-TU 数据手册

APM4800

N-Channel Enhancement Mode MOSFET

Features

Pin Description

SO-8

•

30V/8A , R_DS(ON)=15mΩ(typ.) @ V_GS=10V

R_DS(ON)=22mΩ(typ.) @ V_GS=4.5V

Super High Dense Cell Design for Extremely

Low R_DS(ON)

•

Reliable and Rugged

SO-8 Package

Top View

Applications

•

Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

N-Channel MOSFET

P ackage C ode

K : S O -8

APM 4800

O perating Junction Tem p. R ange

C : -55 to 150°C

H andling C ode

Tem p. R ange

P ackage C ode

H andling C ode

TU : Tube

TR : Tape & R eel

A P M 4800

X X X X X

A P M 4800 K :

X X X X X - D ate C ode

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Symbol

V_DSS

Parameter

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

I_D

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

I_DM

* Surface Mounted on FR4 Board, t 10 sec.

≤

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Rev. A.1 - Jan., 2002

www.anpec.com.tw

12 3 4 5 6 7...9

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