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APM4532KC-TR PDF预览

APM4532KC-TR

更新时间: 2024-09-15 22:12:03
品牌 Logo 应用领域
茂达 - ANPEC /
页数 文件大小 规格书
13页 207K
描述
Dual Enhancement Mode MOSFET (N-and P-Channel)

APM4532KC-TR 技术参数

是否Rohs认证:不符合生命周期:Contact Manufacturer
Reach Compliance Code:compliant风险等级:5.69
Is Samacsys:N最大漏极电流 (Abs) (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

APM4532KC-TR 数据手册

 浏览型号APM4532KC-TR的Datasheet PDF文件第2页浏览型号APM4532KC-TR的Datasheet PDF文件第3页浏览型号APM4532KC-TR的Datasheet PDF文件第4页浏览型号APM4532KC-TR的Datasheet PDF文件第5页浏览型号APM4532KC-TR的Datasheet PDF文件第6页浏览型号APM4532KC-TR的Datasheet PDF文件第7页 
APM4532  
Dual Enhancement Mode MOSFET (N-and P-Channel)  
Features  
Pin Description  
N-Channel  
S1  
G1  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
D1  
D2  
D2  
30V/5A, RDS(ON)=35m(typ.) @ VGS=10V  
RDS(ON)=60m(typ.) @ VGS=4.5V  
P-Channel  
-30V/-3.5A, RDS(ON)=85m(typ.) @ VGS=-10V  
RDS(ON)=135m(typ.) @ VGS=-4.5V  
SO-8  
Super High Dense Cell Design for Extremely  
Low RDS(ON)  
D 1 D 1  
S 2  
Reliable and Rugged  
SO-8 Package  
G 2  
G 1  
Applications  
S 1  
D 2 D 2  
N-Channel MOSFET  
P-Channel MOSFET  
Power Management in Notebook Computer ,  
Portable Equipment and Battery Powered  
Systems.  
Ordering and Marking Information  
APM4532  
Package Code  
K : SO-8  
Operation Junction Temp. Range  
C : -55 to 150 C  
Handling Code  
Handling Code  
Temp. Range  
Package Code  
°
TR : Tape & Reel  
APM4532  
XXXXX  
APM4532 K :  
XXXXX - Date Code  
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise  
customers to obtain the latest version of relevant information to verify before placing orders.  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Sep., 2003  
1
www.anpec.com.tw  

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