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APM4461 PDF预览

APM4461

更新时间: 2024-11-05 21:53:47
品牌 Logo 应用领域
茂达 - ANPEC /
页数 文件大小 规格书
9页 570K
描述
P-Channel Enhancement Mode MOSFET

APM4461 数据手册

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APM4461  
P-Channel Enhancement Mode MOSFET  
Features  
Pin Description  
-20V/-7A, RDS(ON) = 25m(typ.) @ VGS = -10V  
RDS(ON) = 35m(typ.) @ VGS = -4.5V  
RDS(ON) = 55m(typ.) @ VGS = -2.5V  
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
Super High Density Cell Design  
Reliable and Rugged  
SOP-8 Package  
SO 8  
S
S S  
Applications  
Power Management in Notebook Computer,  
Portable Equipment and Battery Powered  
Systems  
G
D D D D  
P-Channel MOSFET  
Ordering and Marking Information  
APM 4461  
P ackage C ode  
K : S O -8  
O peration Junction Tem p. R ange  
C : -55 to 150 C  
H andling C ode  
H andling C ode  
Tem p. R ange  
P ackage C ode  
°
TR : Tape & R eel  
A P M 4461  
X X X X X  
A P M 4461 K  
:
X X X X X - D ate C ode  
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)  
Symbol  
VDSS  
Parameter  
Rating  
-20  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGSS  
±20  
-7  
*
ID  
Maximum Drain Current – Continuous  
A
* Surface Mounted on FR4 Board, t 10 sec.  
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise  
customers to obtain the latest version of relevant information to verify before placing orders.  
Copyright ANPEC Electronics Corp.  
1
www.anpec.com.tw  
Rev. A.2 - May., 2003  

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