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APM4430 PDF预览

APM4430

更新时间: 2024-09-15 22:39:11
品牌 Logo 应用领域
茂达 - ANPEC /
页数 文件大小 规格书
10页 181K
描述
N-Channel Enhancement Mode MOSFET

APM4430 数据手册

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APM4430  
N-Channel Enhancement Mode MOSFET  
Features  
Pin Description  
30V/23A , RDS(ON)=4.5m(typ.) @ VGS=10V  
RDS(ON)=7m(typ.) @ VGS=5V  
Super High Dense Cell Design for Extremely  
Low RDS(ON)  
4
5
6
3
2
1
Reliable and Rugged  
7
8
SO-8 Package  
Applications  
SO 8  
Power Management in Notebook Computer ,  
Portable Equipment and Battery Powered  
Systems .  
Ordering and Marking Information  
P ackage C ode  
K : S O -8  
APM 4430  
O perating Junction Tem p. R ange  
C : -55 to 150°C  
H andling C ode  
Tem p. R ange  
P ackage C ode  
H andling C ode  
TU : Tube  
TR : Tape & R eel  
A P M 4430  
X X X X X  
A P M 4430 K :  
X X X X X - D ate C ode  
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)  
Symbol  
Parameter  
Rating  
30  
Unit  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
V
±20  
23  
Maximum Drain Current – Continuous  
Maximum Drain Current – Pulsed  
ID  
A
IDM  
± 60  
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise  
customers to obtain the latest version of relevant information to verify before placing orders.  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Oct., 2001  
1
www.anpec.com.tw  

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