Datasheet > APM3095P

APM3095P

更新时间： 2024-09-27 21:54:19

品牌	Logo	应用领域
茂达 - ANPEC		/
页数	文件大小	规格书
9页	143K
描述
P-Channel Enhancement Mode MOSFET

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数据手册

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APM3095P 数据手册

APM3095P

P-Channel Enhancement Mode MOSFET

Features

Pin Description

• -30V/-6A , R_DS(ON)=95mΩ(typ.) @ V_GS=-10V

R_DS(ON)=140mΩ(typ.) @ V_GS=-4.5V

•

Super High Dense Cell Design for Extremely

Low R_DS(ON)

•

Reliable and Rugged

TO-252 Package

Top View of TO-252

Applications

•

Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

P-Channel MOSFET

Ordering and Marking Information

P ackage C ode

U : TO -252

APM 3095P

O perating Junction Tem p. R ange

C : -55 to 150°C

H andling C ode

Tem p. R ange

P ackage C ode

H andling C ode

TU : Tube

TR : Tape & R eel

A P M 3095P U :

A P M 3095P

X X X X X

X X X X X - D ate C ode

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Symbol

V_DSS

Parameter

Rating

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±25

-12

I_D

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

I_DM

-30

* Surface Mounted on FR4 Board, t 10 sec.

≤

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Rev. A.1 - Oct., 2002

www.anpec.com.tw

12 3 4 5 6 7...9

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