Datasheet > APM2312A

APM2312A

更新时间： 2024-09-14 22:47:51

品牌	Logo	应用领域
茂达 - ANPEC		/
页数	文件大小	规格书
9页	154K
描述
N-Channel Enhancement Mode MOSFET

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数据手册

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APM2312A 数据手册

APM2312

N-Channel Enhancement Mode MOSFET

Features

Pin Description

•

16V/5A , R_DS(ON)=35mΩ(typ.) @ V_GS=4.5V

R_DS(ON)=45mΩ(typ.) @ V_GS=2.5V

R_DS(ON)

=60mΩ(typ.) @ V_GS=1.8V

•

Super High Dense Cell Design for Extremely

Low R_DS(ON)

•

Reliable and Rugged

SOT-23 Package

Top View of SOT-23

Applications

•

Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

N-Channel MOSFET

Ordering and Marking Information

APM2312

Package Code

A : SOT-23

Operation Junction Temp. Range

C : -55 to 150 C

Handling Code

Temp. Range

Package Code

TR : Tape & Reel

APM2312 A :

X - Date Code

M12X

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Symbol

V_DSS

Parameter

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±8

I_D

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

I_DM

* Surface Mounted on FR4 Board, t 10 sec.

≤

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Rev. A.2 - July., 2003

www.anpec.com.tw

12 3 4 5 6 7...9

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