APL602B2
APL602L
600V 49A 0.125Ω
B2
LINEAR MOSFET
T-MAX™
TO-264
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
L
D
• Higher FBSOA
• Popular T-MAX™ or TO-264 Package
• Higher Power Dissipation
G
S
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APL602B2-L
600
UNIT
Symbol
Parameter
VDSS
Drain-Source Voltage
Volts
ID
Continuous Drain Current @ TC = 25°C
49
Amps
Volts
1
IDM
Pulsed Drain Current
196
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Watts
W/°C
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
730
PD
5.84
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
49
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
600
49
TYP
MAX
UNIT
Volts
BVDSS
ID(ON)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (VGS = 12V, 24.5A)
Zero Gate Voltage Drain Current (VDS = 600v, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Amps
Ohms
RDS(ON)
0.125
25
IDSS
µA
250
±100
4
IGSS
nA
VGS(TH)
2
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com