APL602L

更新时间： 2024-01-28 13:59:33

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LINEAR MOSFET 600V 49A 0.125з

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APL602L 数据手册

APL602B2

APL602L

600V 49A 0.125Ω

LINEAR MOSFET

T-MAX™

TO-264

Linear Mosfets are optimized for applications operating in the Linear

region where concurrent high voltage and high current can occur at

near DC conditions (>100 msec).

• Higher FBSOA

• Popular T-MAX™ or TO-264 Package

• Higher Power Dissipation

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

APL602B2-L

600

UNIT

Symbol

Parameter

V_DSS

Drain-Source Voltage

Volts

I_D

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

196

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

730

P_D

5.84

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions / Part Number

MIN

600

TYP

MAX

UNIT

Volts

BV_DSS

I_D(ON)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

On State Drain Current ²(V_DS> I_D(ON) x R_DS(ON) Max, V_GS= 12V)

Drain-Source On-State Resistance ²(V_GS= 12V, 24.5A)

Zero Gate Voltage Drain Current (V_DS= 600v, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 480V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

Amps

Ohms

R_DS(ON)

0.125

I_DSS

µA

250

±100

I_GSS

V_GS(TH)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

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