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APL602J PDF预览

APL602J

更新时间: 2024-02-15 07:24:42
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页数 文件大小 规格书
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描述
LINEAR MOSFET 600V 43A 0.125з

APL602J 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-264AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.17雪崩能效等级(Eas):3000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):49 A
最大漏极电流 (ID):49 A最大漏源导通电阻:0.125 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):730 W
最大脉冲漏极电流 (IDM):196 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

APL602J 数据手册

 浏览型号APL602J的Datasheet PDF文件第2页浏览型号APL602J的Datasheet PDF文件第3页浏览型号APL602J的Datasheet PDF文件第4页 
APL602J  
600V 43A 0.125  
S
S
LINEAR MOSFET  
Linear Mosfets are optimized for applications operating in the Linear  
region where concurrent high voltage and high current can occur at  
near DC conditions (>100 msec).  
D
G
SOT-227  
"UL Recognized"  
ISOTOP®  
• Higher FBSOA  
• Popular SOT-227 Package  
D
S
• Higher Power Dissipation  
G
MAXIMUMRATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
APL602J  
600  
UNIT  
Symbol  
Parameter  
VDSS  
Drain-Source Voltage  
Volts  
ID  
Continuous Drain Current @ TC = 25°C  
43  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
172  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
Watts  
W/°C  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
565  
PD  
4.52  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
43  
1
EAR  
EAS  
50  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
3000  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions / Part Number  
MIN  
600  
43  
TYP  
MAX  
UNIT  
Volts  
BVDSS  
ID(ON)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)  
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)  
Drain-Source On-State Resistance 2 (VGS = 12V, 21.5A)  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)  
Amps  
Ohms  
RDS(ON)  
0.125  
25  
IDSS  
µA  
250  
±100  
4
IGSS  
nA  
VGS(TH)  
2
Volts  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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