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APE80H06NF PDF预览

APE80H06NF

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
永源微电子 - APM 光电二极管
页数 文件大小 规格书
7页 1404K
描述
PDFN5*6-8L

APE80H06NF 数据手册

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APE80N06NF  
65V N-Channel Enhancement Mode MOSFET  
Description  
The APE80N06NF uses advanced APM-SGT II technology  
to provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 10V. This  
device is suitable for use as a Battery protection  
or in other Switching application.  
General Features  
VDS = 60V ID =80A  
RDS(ON) < 5.5mΩ @ VGS=10V Type4.5mΩ)  
AECQ101  
Application  
Battery protection  
UPS  
Quality Assurance  
AEC-Q101  
Package Marking and Ordering Information  
Product ID  
Pack  
Marking  
Qty(PCS)  
APE80H06NF  
PDFN5*6-8L  
APE80H06NF XXX YYYY  
5000  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Symbol  
VDS  
Parameter  
Rating  
60  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current1,6  
V
V
A
VGS  
±20  
80  
ID@TC=25  
Continuous Drain Current1,6  
51  
A
ID@TC=100℃  
IDM  
EAS  
IAS  
Pulsed Drain Current2  
Single Pulse Avalanche Energy3  
Avalanche Current  
380  
80  
A
mJ  
A
40  
Total Power Dissipation4  
73.5  
W
PD@TC=25℃  
TSTG  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Resistance Junction-Ambient 1  
Thermal Resistance Junction-Case1  
-55 to 175  
-55 to 175  
25  
TJ  
/W  
/W  
RθJA  
RθJC  
1.7  
APE80N06NF REV1.0  
永源微電子科技有限公司  

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