Datasheet > APE80H06NF

APE80H06NF

更新时间： 2024-10-31 17:15:39

品牌	Logo	应用领域
永源微电子 - APM		光电二极管
页数	文件大小	规格书
7页	1404K
描述
PDFN5*6-8L

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中文翻译

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APE80H06NF 数据手册

APE80N06NF

65V N-Channel Enhancement Mode MOSFET

Description

The APE80N06NF uses advanced APM-SGT II technology

to provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

V_DS= 60V I_D=80A

R_DS(ON)< 5.5mΩ @ V_GS=10V （Type：4.5mΩ）

AECQ101

Application

Battery protection

UPS

Quality Assurance

AEC-Q101

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

APE80H06NF

PDFN5*6-8L

APE80H06NF XXX YYYY

5000

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Symbol

VDS

Parameter

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current^1,6

VGS

±20

I_D@T_C=25℃

Continuous Drain Current^1,6

I_D@T_C=100℃

IDM

EAS

IAS

Pulsed Drain Current²

Single Pulse Avalanche Energy³

Avalanche Current

380

Total Power Dissipation⁴

73.5

P_D@T_C=25℃

TSTG

Storage Temperature Range

Operating Junction Temperature Range

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Case¹

-55 to 175

℃

T_J

℃/W

R_θJA

R_θJC

1.7

APE80N06NF REV1.0

永源微電子科技有限公司

12 3 4 5 6 7

中文翻译

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