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APE3P06MI PDF预览

APE3P06MI

更新时间: 2024-09-14 17:15:35
品牌 Logo 应用领域
永源微电子 - APM /
页数 文件大小 规格书
7页 1144K
描述
SOT23-3L

APE3P06MI 数据手册

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APE3P06MI  
-60V P-Channel Enhancement Mode MOSFET  
Description  
The APE3P06MI uses advanced APM-Trench technology  
to provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 4.5V. This  
device is suitable for use as a Battery protection  
or in other Switching application.  
General Features  
VDS = -60V ID =-3.8A  
RDS(ON) < -130mΩ @ VGS=-10V (Type:110mΩ)  
Application  
AECQ101  
Battery protection  
Load switch  
Uninterruptible power supply  
Quality Assurance  
AEC-Q101  
Package Marking and Ordering Information  
Product ID  
Pack  
Marking  
Qty(PCS)  
APE3P06MI  
SOT23-3L  
APE3P06MI  
3000  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Rating  
-60  
Symbol  
Parameter  
Units  
VDS  
Drain-Source Voltage  
V
V
VGS  
ID@TA=25  
ID@TA=70℃  
IDM  
±20  
Gate-Source Voltage  
Continuous Drain Current, VGS @ 10V1  
Continuous Drain Current, VGS @ 10V1  
Pulsed Drain Current2  
-3.8  
A
A
-1.5  
-14  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation3  
2
W
Storage Temperature Range  
-55 to 175  
-55 to 175  
60  
TJ  
Operating Junction Temperature Range  
Thermal Resistance Junction-Ambient 1  
Thermal Resistance Junction-Case1  
/W  
/W  
RθJA  
RθJC  
10  
APE3P06MI RVE1.0  
永源微電子科技有限公司  

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