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AP9T19GJ PDF预览

AP9T19GJ

更新时间: 2024-11-30 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极晶体管功率场效应晶体管开关脉冲栅极驱动
页数 文件大小 规格书
4页 80K
描述
Low Gate Charge, Capable of 2.5V gate drive

AP9T19GJ 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (ID):33 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9T19GJ 数据手册

 浏览型号AP9T19GJ的Datasheet PDF文件第2页浏览型号AP9T19GJ的Datasheet PDF文件第3页浏览型号AP9T19GJ的Datasheet PDF文件第4页 
AP9T19GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
12V  
16mΩ  
33A  
D
S
Capable of 2.5V gate drive  
Single Drive Requirement  
G
Description  
G
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
D
S
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
12  
±12  
Gate-Source Voltage  
V
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
33  
A
21  
A
80  
A
PD@TC=25℃  
Total Power Dissipation  
25  
W
Linear Derating Factor  
0.2  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
-55 to 150  
-55 to 150  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
5
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
201026041  

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