生命周期: | Contact Manufacturer | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.71 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 120 A |
最大漏源导通电阻: | 0.0042 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 320 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP99T06GP | A-POWER |
获取价格 |
TRANSISTOR 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT | |
AP99T06GP-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic | |
AP9A102A-20VC | ETC |
获取价格 |
x4 SRAM | |
AP9A102A-20VI | ETC |
获取价格 |
x4 SRAM | |
AP9A102A-25VC | ETC |
获取价格 |
x4 SRAM | |
AP9A102A-25VI | ETC |
获取价格 |
x4 SRAM | |
AP9A102B-10VC | ISSI |
获取价格 |
Cache SRAM, 256KX4, 10ns, CMOS, PDSO28 | |
AP9A102B-10VI | ISSI |
获取价格 |
Cache SRAM, 256KX4, 10ns, CMOS, PDSO28 | |
AP9A102B-12VC | ISSI |
获取价格 |
Cache SRAM, 256KX4, 12ns, CMOS, PDSO28 | |
AP9A102B-12VI | ISSI |
获取价格 |
Cache SRAM, 256KX4, 12ns, CMOS, PDSO28 |