Datasheet > AP99T03GS

AP99T03GS

更新时间： 2024-05-23 22:22:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	100K
描述
TO-263

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数据手册

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AP99T03GS 数据手册

AP99T03GS-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

30V

2.5mΩ

200A

▼ Ultra-low On-resistance

R_DS(ON)

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP99T03 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

TO-263(S)

The TO-263 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique and suited for high current application due to the low

connection resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current (Chip)

200

Drain Current, V_GS@ 10V³

120

Pulsed Drain Current¹

800

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation⁴

156

℃

3.12

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

0.8

Rthj-a

Data and specifications subject to change without notice

201410282

12 3 4 5

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