是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.7 | Is Samacsys: | N |
其他特性: | ULTRA-LOW RESISTANCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 120 A |
最大漏源导通电阻: | 0.0025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 800 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP99T03GR-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
AP99T03GS | A-POWER |
获取价格 |
TO-263 | |
AP99T03GS-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
AP99T06AGI-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Fast Switching Characteristic | |
AP99T06AGP-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance, Fast Switching Characteristic | |
AP99T06GP | A-POWER |
获取价格 |
TRANSISTOR 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT | |
AP99T06GP-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic | |
AP9A102A-20VC | ETC |
获取价格 |
x4 SRAM | |
AP9A102A-20VI | ETC |
获取价格 |
x4 SRAM | |
AP9A102A-25VC | ETC |
获取价格 |
x4 SRAM |