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AP9997GM PDF预览

AP9997GM

更新时间: 2024-01-03 09:51:43
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 188K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997GM 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.58
Is Samacsys:NBase Number Matches:1

AP9997GM 数据手册

 浏览型号AP9997GM的Datasheet PDF文件第2页浏览型号AP9997GM的Datasheet PDF文件第3页浏览型号AP9997GM的Datasheet PDF文件第4页浏览型号AP9997GM的Datasheet PDF文件第5页 
AP9997GM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Fast Switching Characteristic  
BVDSS  
RDS(ON)  
ID  
95V  
110mΩ  
3A  
D2  
D2  
Single Drive Requirement  
D1  
D1  
Surface Mount Package  
G2  
S2  
G1  
S1  
SO-8  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance  
and cost-effectiveness.  
D2  
S2  
D1  
S1  
G2  
G1  
The SO-8 package is widely preferred for commercial  
-industrial surface mount applications and suited for  
low voltage applications such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Rating  
Units  
V
VDS  
VGS  
95  
±20  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=100℃  
IDM  
3
2.3  
A
A
20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2
W
Storage Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Maximum Thermal Resistance, Junction-ambient3  
Rthj-a  
/W  
Data and specifications subject to change without notice  
1
200803063  

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