AP9997GK-HF

更新时间： 2024-01-13 01:12:21

品牌	Logo	应用领域
富鼎先进 - A-POWER		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
4页	99K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

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技术参数
数据手册

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AP9997GK-HF 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

AP9997GK-HF 数据手册

AP9997AGH-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

120V

185mΩ

8.8A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-252(H)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

120

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

8.8

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

5.6

P_D@T_C=25℃

T_STG

Total Power Dissipation

34.7

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

3.6

Rthj-a

62.5

Data and specifications subject to change without notice

200911063

12 3 4

中文翻译

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