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AP9997BGJ-HF PDF预览

AP9997BGJ-HF

更新时间: 2024-02-21 19:31:33
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 102K
描述
Simple Drive Requirement

AP9997BGJ-HF 数据手册

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AP9997BGH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
145m  
9.3A  
Lower Gate Charge  
Fast Switching Characteristic  
G
Halogen Free & RoHS Compliant Product  
Description  
AP9997B series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
The TO-252 package is widely preferred for all commercial-industrial surface  
mount applications using infrared reflow technique and suited for high  
current application due to the low connection resistance. The through-hole  
version (AP9997BGJ) are available for low-profile applications.  
G
D
S
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+30  
V
Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
9.3  
A
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
5.8  
A
30  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Total Power Dissipation3  
27.8  
W
W
2
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
4.5  
Rthj-a  
62.5  
110  
Rthj-a  
Data and specifications subject to change without notice  
1
201501262  

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