Datasheet > AP9995GH-HF_14

AP9995GH-HF_14

更新时间： 2024-11-26 01:14:19

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	60K
描述
Simple Drive Requirement

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数据手册

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AP9995GH-HF_14 数据手册

AP9995GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

90V

240mΩ

▼ Lower Gate Chage

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

The Advanced Power MOSFETs from APEC provide the

best combination of fast switching, ruggedized device design, low on-

designer with the best combination of fast switching,

resistance and cost-effectiveness.

TO-251(J)

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters. The through-hole version (AP9995GJ) is

available for low-profile applications.

TO-252(H)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_c=25℃

I_D@T_c=100℃

I_DM

4.4

P_D@T_c=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation³

20.8

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

6.0

62.5

110

Rthj-a

Data and specifications subject to change without notice

201108171

12 3 4

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