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AP9995GH,J-HF PDF预览

AP9995GH,J-HF

更新时间: 2024-01-25 17:13:42
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 60K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9995GH,J-HF 数据手册

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AP9995GH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
90V  
240mΩ  
7A  
Lower Gate Chage  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
D
TO-251(J)  
S
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters. The through-hole version (AP9995GJ) is  
available for low-profile applications.  
G
D
S
TO-252(H)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
90  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@Tc=25  
ID@Tc=100℃  
IDM  
7
4.4  
A
A
15  
A
PD@Tc=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Total Power Dissipation3  
20.8  
W
W
2
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
6.0  
62.5  
110  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
201108171  

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