Datasheet > AP9992AGP-HF

AP9992AGP-HF

更新时间： 2024-09-27 12:52:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	131K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9992AGP-HF 数据手册

AP9992AGP-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

60V

3.5mΩ

161A

▼ Lower On-resistance

▼ Lower Gate Charge

▼ RoHS Compliant & Halogen-Free

Description

AP9992A series are from Advanced Power innovated design and silicon

The Advanced Power MOSFETs from APEC provide the

process technology to achieve the lowest possible on-resistance and fast

designer with the best combination of fast switching,

switching performance. It provides the designer with an extreme efficient

ruggedized device design, low on-resistance and cost-effectiveness.

device for use in a wide range of power applications

The TO-220 package is widely preferred for all commercial-industrial

through hole applications. The low thermal resistance and low package

cost contribute to the worldwide popular package.

TO-220(P)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

161

120

102

300

166

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current (Chip)

Continuous Drain Current, V_GS@ 10V³

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

0.75

Rthj-a

Data and specifications subject to change without notice

201205111

12 3 4

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