AP9975GM

更新时间： 2024-06-26 08:51:34

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	68K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9975GM 数据手册

AP9975GM

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

60V

21mΩ

7.6A

▼ Lower On-resistance

▼ Surface Mount Package

▼ RoHS Compliant

SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, lower on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Rating

Units

V_DS

V_GS

+25

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

7.6

6.1

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201011182

12 3 4

中文翻译

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