Datasheet > AP9972GH

AP9972GH

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	97K
描述
TO-252

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AP9972GH 数据手册

AP9972GH-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

60V

18mΩ

60A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP9972 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow technique

and suited for high current application due to the low connection

resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

230

P_D@T_C=25℃

T_STG

Total Power Dissipation

89.3

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

1.4

Rthj-a

62.5

Data and specifications subject to change without notice

201501263

12 3 4 5

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