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AP9972AGP-HF PDF预览

AP9972AGP-HF

更新时间: 2024-11-06 12:52:15
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 101K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9972AGP-HF 数据手册

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AP9972AGP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
60V  
16mΩ  
60A  
D
S
Single Drive Requirement  
Fast Switching Performance  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
applications and suited for low voltage applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
60  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
38  
A
240  
A
PD@TC=25℃  
Total Power Dissipation  
89  
W
Linear Derating Factor  
0.7  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.4  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201203075  

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