5秒后页面跳转
AP9971AGJ-HF PDF预览

AP9971AGJ-HF

更新时间: 2024-11-22 01:21:03
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
5页 101K
描述
Fast Switching Characteristic

AP9971AGJ-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.83配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):22 A
最大漏源导通电阻:0.036 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

AP9971AGJ-HF 数据手册

 浏览型号AP9971AGJ-HF的Datasheet PDF文件第2页浏览型号AP9971AGJ-HF的Datasheet PDF文件第3页浏览型号AP9971AGJ-HF的Datasheet PDF文件第4页浏览型号AP9971AGJ-HF的Datasheet PDF文件第5页 
AP9971AGH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
36mΩ  
22A  
Lower On-resistance  
Fast Switching Characteristic  
Halogen Free & RoHS Compliant  
G
Description  
AP9971A series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications using infrared reflow technique and suited for  
high current application due to the low connection resistance. The  
through-hole version (AP9971AGJ) are available for low-profile  
applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
22  
A
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
14  
A
80  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
34.7  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maixmum Thermal Resistance, Junction-ambient  
3.6  
Rthj-a  
62.5  
110  
Rthj-a  
Data and specifications subject to change without notice  
1
201501263  

与AP9971AGJ-HF相关器件

型号 品牌 获取价格 描述 数据表
AP9971AGM A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971AGM-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971AGP A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971AGS A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971GD A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971GH A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971GH-HF A-POWER

获取价格

TRANSISTOR POWER, FET, FET General Purpose Power
AP9971GI A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971GI-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971GJ A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET