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AP9962GMA PDF预览

AP9962GMA

更新时间: 2024-11-20 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 94K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9962GMA 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PSSO-G4
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):36 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9962GMA 数据手册

 浏览型号AP9962GMA的Datasheet PDF文件第2页浏览型号AP9962GMA的Datasheet PDF文件第3页浏览型号AP9962GMA的Datasheet PDF文件第4页 
AP9962GMA  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
SO-8 similar area footprint and pin assignment  
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
40V  
20mΩ  
36A  
D
S
Fast Switching Speed  
RoHS Compliant  
G
D
Description  
The APAK-5 package is preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
S
S
S
G
APAK-5  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
36  
A
23  
A
120  
A
PD@TC=25℃  
Total Power Dissipation  
37  
W
Linear Derating Factor  
0.29  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient3  
Max.  
Max.  
3.4  
85  
Rthj-a  
Data and specifications subject to change without notice  
200523061-1/4  

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