Datasheet > AP9962GJ_14

AP9962GJ_14

更新时间： 2024-11-21 01:23:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	103K
描述
Single Drive Requirement

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数据手册

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AP9962GJ_14 数据手册

AP9962GH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

40V

20mΩ

32A

▼ Single Drive Requirement

▼ Surface Mount Package

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP9962GJ) are

available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

150

P_D@T_C=25℃

Total Power Dissipation

27.8

Linear Derating Factor

0.22

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

4.5

62.5

110

Rthj-a

Data and specifications subject to change without notice

200907164

12 3 4

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