AP9916H

更新时间： 2024-10-28 08:32:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	85K
描述
N-CHANNEL ENHANCEMENT MODE

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中文翻译

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数据手册

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AP9916H 数据手册

AP9916H/J

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low on-resistance

BV_DSS

R_DS(ON)

I_D

18V

25mΩ

35A

▼ Capable of 2.5V gate drive

▼ Low drive current

▼ Single Drive Requirement

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

Continuous Drain Current, V_GS@ 4.5V

I_D@T_C=25℃

I_D@T_C=125℃

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current¹

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.4

W/℃

℃

T_STG

T_J

Storage Temperature Range

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

2.5

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

Data and specifications subject to change without notice

200227032

12 3 4 5 6

中文翻译

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与AP9916H相关器件

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