Datasheet > AP9915K

AP9915K

更新时间： 2024-10-27 22:05:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	108K
描述
N CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9915K 数据手册

AP9915K

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

20V

50mΩ

6.2A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

SOT-223

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Gate-Source Voltage

±12

6.2

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

3.2

0.025

-55 to 150

W/℃

℃

T_STG

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Rthj-a

Parameter

Value

Unit

℃/W

Thermal Resistance Junction-ambient³

Max.

Data and specifications subject to change without notice

200323041

12 3 4

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与AP9915K相关器件

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AP9916GH	A-POWER	获取价格	Low on-resistance, Capable of 2.5V gate drive
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AP9916H	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE
AP9916J	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE
AP9918GH	A-POWER	获取价格	Low on-resistance, Capable of 2.5V gate drive
AP9918GJ	A-POWER	获取价格	Low on-resistance, Capable of 2.5V gate drive
AP9918H	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9918J	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9920GEO	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9922AGEO-HF	A-POWER	获取价格	Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application