AP9685GM

更新时间： 2024-10-28 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极驱动
页数	文件大小	规格书
4页	57K
描述
Simple Drive Requirement, Lower Gate Charge

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AP9685GM 数据手册

AP9685GM

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

80V

45mΩ

5.3A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant

SO-8

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

5.3

3.4

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201211132

12 3 4

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