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AP9575AGI-HF PDF预览

AP9575AGI-HF

更新时间: 2024-10-28 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极开关晶体管功率场效应晶体管脉冲驱动局域网
页数 文件大小 规格书
4页 100K
描述
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic

AP9575AGI-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):17 A
最大漏源导通电阻:0.064 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9575AGI-HF 数据手册

 浏览型号AP9575AGI-HF的Datasheet PDF文件第2页浏览型号AP9575AGI-HF的Datasheet PDF文件第3页浏览型号AP9575AGI-HF的Datasheet PDF文件第4页 
AP9575AGI-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-60V  
64mΩ  
-17A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
The TO-220CFM isolation package is widely preferred for commercial-  
industrial through hole applications.  
G
D
TO-220CFM(I)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
-17  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
-11  
A
-60  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
31.3  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4.0  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
200908031  

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