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AP9563GH_09 PDF预览

AP9563GH_09

更新时间: 2024-10-27 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 栅极开关驱动
页数 文件大小 规格书
4页 105K
描述
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic

AP9563GH_09 数据手册

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AP9563GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-40V  
40mΩ  
-26A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
Description  
G
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
D
S
TO-252(H)  
TO-251(J)  
ruggedized device design, low on-resistance and cost-effectiveness.  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9563GJ) is  
available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
-26  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
-16  
A
-64  
A
PD@TC=25℃  
Total Power Dissipation  
39  
W
Linear Derating Factor  
0.31  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
3.2  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance Junction-ambient  
Rthj-a  
62.5  
110  
Rthj-a  
Data and specifications subject to change without notice  
1
200902133  

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