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AP9561GM PDF预览

AP9561GM

更新时间: 2024-10-27 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极开关晶体管功率场效应晶体管脉冲光电二极管驱动
页数 文件大小 规格书
5页 222K
描述
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic

AP9561GM 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.64
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):9.4 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP9561GM 数据手册

 浏览型号AP9561GM的Datasheet PDF文件第2页浏览型号AP9561GM的Datasheet PDF文件第3页浏览型号AP9561GM的Datasheet PDF文件第4页浏览型号AP9561GM的Datasheet PDF文件第5页 
AP9561GM  
RoHS-compliat Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-40V  
18mΩ  
-9.4A  
D
D
D
Lower Gate Charge  
D
Fast Switching Characteristic  
G
S
S
S
SO-8  
Description  
D
S
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-9.4  
A
-7.5  
A
-40  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
200806201  

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