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AP9561AGJ-HF PDF预览

AP9561AGJ-HF

更新时间: 2024-10-27 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 57K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9561AGJ-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):39 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):160 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP9561AGJ-HF 数据手册

 浏览型号AP9561AGJ-HF的Datasheet PDF文件第2页浏览型号AP9561AGJ-HF的Datasheet PDF文件第3页浏览型号AP9561AGJ-HF的Datasheet PDF文件第4页 
AP9561AGJ-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
-40V  
18mΩ  
-39A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP9561A series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
G
D
TO-251(J)  
S
The straight lead version TO-251 package is widely preferred for all  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-39  
A
-25  
A
-160  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Total Power Dissipation3  
50  
W
W
1.13  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.5  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
201303042  

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