是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.64 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 39 A | 最大漏源导通电阻: | 0.018 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 160 A | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP9561AGM-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP9561GH | A-POWER |
获取价格 |
TO-252 | |
AP9561GH-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Fast Switching Characteristic | |
AP9561GH-HF_14 | A-POWER |
获取价格 |
Simple Drive Requirement | |
AP9561GI | A-POWER |
获取价格 |
TO-220CFM | |
AP9561GI-HF | A-POWER |
获取价格 |
Lower Gate Charge, Simple Drive Requirement | |
AP9561GJ-HF | A-POWER |
获取价格 |
Lower On-resistance, Simple Drive Requirement | |
AP9561GJ-HF_14 | A-POWER |
获取价格 |
Simple Drive Requirement | |
AP9561GM | A-POWER |
获取价格 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic | |
AP9561GM-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power |