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AP9561AGI-HF PDF预览

AP9561AGI-HF

更新时间: 2024-10-27 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 58K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9561AGI-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.63
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):30 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):120 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9561AGI-HF 数据手册

 浏览型号AP9561AGI-HF的Datasheet PDF文件第2页浏览型号AP9561AGI-HF的Datasheet PDF文件第3页浏览型号AP9561AGI-HF的Datasheet PDF文件第4页 
AP9561AGI-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
-40V  
18mΩ  
-30A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP9561A series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
The TO-220CFM package is widely preferred for all commercial-  
industrial through hole applications. The mold compound provides a  
high isolation voltage capability and low thermal resistance between  
the tab and the external heat-sink.  
G
D
TO-220CFM(I)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
-30  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
A
-19  
A
-120  
29.7  
1.92  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
W
W
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4.2  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
201301141  

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