是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.68 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 51 A |
最大漏极电流 (ID): | 51 A | 最大漏源导通电阻: | 0.0125 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 54.3 W |
最大脉冲漏极电流 (IDM): | 200 A | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP9561AGH-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP9561AGI-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP9561AGJ-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP9561AGM-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP9561GH | A-POWER |
获取价格 |
TO-252 | |
AP9561GH-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Fast Switching Characteristic | |
AP9561GH-HF_14 | A-POWER |
获取价格 |
Simple Drive Requirement | |
AP9561GI | A-POWER |
获取价格 |
TO-220CFM | |
AP9561GI-HF | A-POWER |
获取价格 |
Lower Gate Charge, Simple Drive Requirement | |
AP9561GJ-HF | A-POWER |
获取价格 |
Lower On-resistance, Simple Drive Requirement |