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AP9510GM PDF预览

AP9510GM

更新时间: 2024-10-27 20:08:43
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 96K
描述
TRANSISTOR 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SOP-8, FET General Purpose Power

AP9510GM 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.75
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):6.9 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9510GM 数据手册

 浏览型号AP9510GM的Datasheet PDF文件第2页浏览型号AP9510GM的Datasheet PDF文件第3页浏览型号AP9510GM的Datasheet PDF文件第4页浏览型号AP9510GM的Datasheet PDF文件第5页浏览型号AP9510GM的Datasheet PDF文件第6页浏览型号AP9510GM的Datasheet PDF文件第7页 
AP9510GM  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
30V  
28mΩ  
6.9A  
D2  
D2  
Low On-resistance  
RDS(ON)  
D1  
D1  
Fast Switching Performance  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
S2  
-30V  
G1  
SO-8  
S1  
55mΩ  
-5.3A  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D2  
D1  
The SO-8 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
G2  
G1  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
30  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
± 20  
6.9  
5.5  
30  
± 20  
-5.3  
-4.2  
-30  
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
A
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
2.0  
W
0.016  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
200831042  

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