AP9412GI-HF

更新时间： 2024-11-22 13:05:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极驱动
页数	文件大小	规格书
5页	171K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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AP9412GI-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.71	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AP9412GI-HF 数据手册

AP9412AGH

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

30V

6mΩ

68A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

□

TO-252(H)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current

Pulsed Drain Current¹

250

P_D@T_C=25℃

T_STG

Total Power Dissipation

44.6

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

2.8

Rthj-a

Maximum Thermal Resistance, Junction-ambient

110

Data & specifications subject to change without notice

200806042

12 3 4 5

中文翻译

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