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AP92T12GP-HF PDF预览

AP92T12GP-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 100K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP92T12GP-HF 数据手册

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AP92T12GP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
120V  
8.5m  
130A  
Lower On-resistance  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
through-hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
120  
+20  
130  
120  
95  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
A
A
A
300  
375  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
0.4  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200912091  

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