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AP92T03GS PDF预览

AP92T03GS

更新时间: 2024-11-18 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲驱动
页数 文件大小 规格书
6页 239K
描述
Simple Drive Requirement, Lower On-resistance

AP92T03GS 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):80 A最大漏源导通电阻:0.004 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP92T03GS 数据手册

 浏览型号AP92T03GS的Datasheet PDF文件第2页浏览型号AP92T03GS的Datasheet PDF文件第3页浏览型号AP92T03GS的Datasheet PDF文件第4页浏览型号AP92T03GS的Datasheet PDF文件第5页浏览型号AP92T03GS的Datasheet PDF文件第6页 
AP92T03GS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
80A  
Lower On-resistance  
Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with  
G
D
the best combination of fast switching,ruggedized device design, low  
on-resistance and cost-effectiveness.  
TO-263(S)  
TO-220(P)  
S
The TO-263 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP92T03GP)  
are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current  
Pulsed Drain Current1  
80  
A
50  
A
320  
A
PD@TC=25℃  
Total Power Dissipation  
89  
W
Linear Derating Factor  
0.71  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
1.4  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Rthj-a  
40  
Rthj-a  
Maixmum Thermal Resistance, Junction-ambient  
62  
Data and specifications subject to change without notice  
1
200901123  

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