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AP92T03GJ PDF预览

AP92T03GJ

更新时间: 2024-11-21 19:54:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
6页 246K
描述
TRANSISTOR 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

AP92T03GJ 技术参数

生命周期:Obsolete零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.004 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):300 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP92T03GJ 数据手册

 浏览型号AP92T03GJ的Datasheet PDF文件第2页浏览型号AP92T03GJ的Datasheet PDF文件第3页浏览型号AP92T03GJ的Datasheet PDF文件第4页浏览型号AP92T03GJ的Datasheet PDF文件第5页浏览型号AP92T03GJ的Datasheet PDF文件第6页 
AP92T03GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
75A  
D
S
Lower On-resistance  
Fast Switching Characteristics  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
TO-251(J)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP92T03GJ)  
are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current  
Pulsed Drain Current1  
75  
A
50  
A
300  
A
PD@TC=25℃  
Total Power Dissipation  
89  
W
Linear Derating Factor  
0.71  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Maximum Thermal Resistance, Junction-ambient  
1.4  
62.5  
110  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
200901123  

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