Datasheet > AP8NA1R2TL

AP8NA1R2TL

更新时间： 2024-09-14 17:15:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	117K
描述
TOLL

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中文翻译

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数据手册

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AP8NA1R2TL 数据手册

AP8NA1R2TL

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

80V

▼ Simple Drive Requirement

R_DS(ON)

1.2mΩ

▼ Ultra Low On-resistance

▼ RoHS Compliant & Halogen-Free

Description

AP486N0A41Rs2ersieesrieasrearferofrmomAdAvdavnacnecdedPPoowweerriinnnnoovvaatteedd design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The TTOOL-2L2p0acpkaacgkeagiseaispewrifdeecltysoplruetfieornrefdorfhoirghalpl ocwomermderncsiaitly-

iannddushtirgiahlpotwhreoruegfhficiehnoclyeapapplipcalictiaotnio. ns. The low thermal

resistance and low package cost contribute to the worldwide

popular package.

TOLL (TL)

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

400

300

280

Pulsed Drain Current¹

1200

333

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁵

Storage Temperature Range

Operating Junction Temperature Range

℃

3.75

500

T_STG

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

0.45

Rthj-a

202007291

12 3 4 5 6

中文翻译

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