5秒后页面跳转
AP85U03GH-HF PDF预览

AP85U03GH-HF

更新时间: 2024-10-02 21:15:59
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
4页 92K
描述
TRANSISTOR 75 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

AP85U03GH-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67雪崩能效等级(Eas):28.8 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0055 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):220 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP85U03GH-HF 数据手册

 浏览型号AP85U03GH-HF的Datasheet PDF文件第2页浏览型号AP85U03GH-HF的Datasheet PDF文件第3页浏览型号AP85U03GH-HF的Datasheet PDF文件第4页 
AP85U03GH-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
30V  
5.5mΩ  
75A  
D
S
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current  
Pulsed Drain Current1  
75  
A
56  
A
220  
A
PD@TC=25℃  
Total Power Dissipation  
60  
W
Linear Derating Factor  
0.48  
W/℃  
mJ  
EAS  
TSTG  
TJ  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
28.8  
-55 to 175  
-55 to 175  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)5  
2.5  
Rthj-a  
62.5  
110  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient  
Data & specifications subject to change without notice  
1
201010256  

与AP85U03GH-HF相关器件

型号 品牌 获取价格 描述 数据表
AP85U03GM-HF A-POWER

获取价格

Ultra_Low On-resistance, Simple Drive Requirement
AP85U03GM-HF_16 A-POWER

获取价格

Fast Switching Characteristic
AP85U03GMT A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85U03GMT-HF A-POWER

获取价格

Simple Drive Requirement, SO-8 Compatible
AP85U03GMT-HF_14 A-POWER

获取价格

Simple Drive Requirement
AP85U03GMT-HF_16 A-POWER

获取价格

Simple Drive Requirement
AP85U03GP-HF A-POWER

获取价格

Low On-resistance, Simple Drive Requirement
AP86T02GH A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP86T02GH-HF A-POWER

获取价格

Fast Switching Characteristic
AP86T02GH-HF_16 A-POWER

获取价格

Fast Switching Characteristic