是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | SMALL OUTLINE, R-PDSO-F | Reach Compliance Code: | compliant |
风险等级: | 5.66 | 雪崩能效等级(Eas): | 45 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 71 A | 最大漏源导通电阻: | 0.009 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F |
元件数量: | 1 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 200 A | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP83T03GH-HF | A-POWER |
获取价格 |
TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND R |
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AP83T03GJB | A-POWER |
获取价格 |
TO-251S |
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AP83T03GJ-HF | A-POWER |
获取价格 |
TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND R |
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AP83T03GM-HF | A-POWER |
获取价格 |
Lower On-resistance, Simple Drive Requirement |
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AP83T03GMT-HF | A-POWER |
获取价格 |
Simple Drive Requirement, SO-8 Compatible |
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AP851100RF | OHMITE |
获取价格 |
Moulded case for proctection and easy to mount |
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AP851100RJ | OHMITE |
获取价格 |
Moulded case for proctection and easy to mount |
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AP85110KJ | OHMITE |
获取价格 |
Moulded case for proctection and easy to mount |
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AP85110RF | OHMITE |
获取价格 |
Moulded case for proctection and easy to mount |
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AP85110RJ | OHMITE |
获取价格 |
Moulded case for proctection and easy to mount |
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